personnel profile
Krishna Saraswat
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Research Statement
Saraswat is working on a variety of problems related to new and innovative materials, structures, and process technology of silicon and germanium devices and interconnects for nanoelectronics. Special areas of his interest are: new device structures for scaling MOS transistors to the nanometer regime, 3-D ICs with multiple layers of heterogeneous devices, metal and optical interconnections, ultrathin MOS gate dielectrics, development of tools and methodology for simulation and control of etching, deposition and rapid thermal process technologies, and environmentally benign manufacturing.
| Degree |
Discipline |
Year |
School |
| PhD |
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1974 |
Stanford |
Academic Honors & Awards
2004 Andrew S. Grove Award, IEEE
Rickey/Nielsen Professor in the School of Engineering
2000 Thomas Callinan Award,The Electrochemical Society
1989 Fellow, IEEE