Faculty & Research

personnel profile

Yoshio Nishi

 
Title:Professor (Research)
Department(s):Electrical Engineering, Materials Science and Engineering by courtesy
Affiliation(s):Director, Stanford Nanofabrication Facility; Director, Initiative for Nanoscale Materials and Processes; Director, Nonvolatile Memory Technology Research Initiative; Research Director, Center for Integrated Systems
Location:Allen 103
Mail Code:4070
Phone:650.723.9508       
Fax:650.725.0991
E-mail: nishiy@stanford.edu
URL: http://ynishi.stanford.edu
http://nanodevice.stanford.edu
Office Hours:4:00pm-6:00pm
Administrator: Gabrielle M. Brits

Research Statement

Nishi’s research interest has been in silicon-based CMOS devices, processes and materials. He is currently interested in research for new device structures with new materials in the nanoelectronics era, non-volatile memory, device layer transfer, and three-dimensional integration.

Research Projects
INMP, Initiative for Nanoscale Materials and Processes
NMTRI, Nonvolatile Memory Technology Research Initiative
Display All Research Projects

Degree Discipline Year School
PhD 1973 University of Tokyo
Publication TitleAuthor(s)/Speaker(s)Open Document
An atomic force microscope study of surface roughness of thin silicon films deposited on SiO{sub 2} Nishi, Y, et. al.
Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen Nishi, Y, et. al.
Display All Publications

Academic Honors & Awards

IEEE Fellow (1987)
IEEE Jack A. Morton Award (1995)
IEEE Robert N. Noyce Medal (2002)