personnel profile

Research Statement

Musgrave's research applies quantum mechanics to study the chemistry of integrated circuit (IC) processing, the properties of surfaces, and thin films. He uses atomistic computational methods to determine the chemical mechanisms and kinetics of gas phase, surface and solid state reactions used in the microelectronics industry and to calculate the properties of the resulting materials. His goal is to computationally prototype new chemistries and materials for future ICs.

Degree	Discipline	Year	School
PhD		1994	Caltech

Publication Title	Author(s)/Speaker(s)	Open Document
Atomic layer deposition of high-kappa dielectrics on nitrided silicon surfaces	Musgrave, CB, et. al.
Atomic layer deposition of hafnium nitrides using ammonia and alkylamide precursors	Musgrave, CB, et. al.
In-situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces	Musgrave, CB, et. al.
Title: Atomic layer deposition of high-kappa dielectrics on nitrided silicon surfaces Author(s): Musgrave, CB, et. al. Journal: Applied Physics Letters Date Published: 2005-5-9 [Close Box] Title: Atomic layer deposition of hafnium nitrides using ammonia and alkylamide precursors Author(s): Musgrave, CB, et. al. Journal: Chemical Physics Letters Date Published: 2005-5-27 [Close Box] Title: In-situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces Author(s): Musgrave, CB, et. al. Journal: Chemistry of Materials Date Published: 2005-10-18 [Close Box]
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